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Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)

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Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)

Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.”

Abstract Excerpt: “This atomically thin assembly forms a van der Waals interfacial layer that enables deposition of ultrathin high-κ oxides.”

Wong, S., An, F., Wu, Y. et al. Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer. Nat Commun 17, 10362 (2026). https://doi.org/10.1038/s41467-026-78053-3. Creative Commons License.



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