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Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)

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Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)

Researchers at KAIST, TDS Innovation, Hanyang University, UNIST, et al. published a technical paper titled “Spatially deterministic nucleation of 2D semiconductors by etching flux.”

“Nucleation control is fundamental to semiconductor deposition, governing when, where and how crystalline materials form. Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated regions. However, they generally do not determine where an individual nucleus forms within the growth regions, leaving even single-nucleation events spatially stochastic and limiting deterministic construction of crystalline materials. Here we report etching-flux-mediated single-centred nucleation of two-dimensional (2D) semiconductors to deterministically localize a single nucleation event.”

Park, J., Kim, J., Kang, S. et al. Spatially deterministic nucleation of 2D semiconductors by etching flux. Nature 658, 398–406 (2026). https://doi.org/10.1038/s41586-026-11095-1. Open access rights.



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