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Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

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Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

Micron's next-generation 3D NAND, which will enter mass production in 2H 2027, is set to offer three significant advantages: it will double storage density, increase I/O performance by 50% compared to the company's current-generation NAND memory, and decrease power consumption, the company revealed at an event this week. To achieve these aggressive goals, Micron plans to take a page from YMTC's book and adopt wafer-on-wafer bonding. Meanwhile, Micron is also developing new materials and denser memory cell architectures to extend 3D NAND scaling beyond G11.

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"We had mentioned we will bring in wafer-on-wafer bonding technology at the right time when it’s cost-effective, and it brings in capability that is important for the product specs at the time, and this is the right timing for that technology," said Scott DeBoer, president and chief technology and products officer at Micron, during the company's event this week. "So this G11 technology is the world's most advanced NAND. It will ramp in the second half of next year, [and] it is based on wafer-on-wafer bonding technology."

Micron's G11 3D NAND represents a substantial advancement over its current G9 (N160) generation. ); and reduce data transfer energy consumption per bit by more than 25%.



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