Villach, Austria is one of the most important locations for Infineon. The market leader in chip manufacturing has now established the world's first high-volume production of GaN power semiconductors on larger 300-mm wafers at its Austrian location. Production is set to start in 2027. By 2034, around 1.1 billion euros are expected to flow into the existing infrastructure in Villach.

Infineon, one of the world’s leading microchip manufacturers, achieved a breakthrough in the production of gallium nitride (GaN) power semiconductors in 2024. The German company’s success in transitioning GaN semiconductors from 200- to 300-millimetre wafers boosted its production volume by a factor of 2.3 and made it possible to establish high-volume manufacturing.

As a result, Infineon plans to invest around €1.1 billion in its Villach site in Austria by 2034. Utilising and modernising the existing cleanroom facilities that are essential for chip production will make the expansion of manufacturing capacities particularly efficient and cost-effective. Infineon Austria currently employs around 5,800 people, approximately 4,800 of whom work at the plant.

“This substantial investment shows our clear commitment to strengthening the European semiconductor ecosystem and Europe’s technological sovereignty. By establishing high-volume manufacturing on 300-millimetre wafers, we will be the first company in the world to bring gallium nitride power electronics into volume production,” said Jochen Hanebeck, CEO of Infineon Technologies AG.

The launch of high-volume production for next-generation gallium nitride (GaN) power semiconductors on 300-millimetre wafers is scheduled for the end of 2027. This will enable Infineon to meet the growing demand for energy-efficient components in future-oriented fields such as AI data centres, electric vehicles, renewable energy, robotics and consumer electronics.

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