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CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end

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CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end

CXMT expects to launch its first 4F² product, a server DDR5 RDIMM, by the end of the year, company president Cao Kanyu said in remarks reported by Yicai. The memory will be built on a denser cell layout, not yet commercialized, using vertical transistors to reduce the cell’s footprint by about one-third on paper. No speeds or capacities have been announced yet for the new product.

Cao spoke about the new RDIMM at the Integrated Chips and Chiplets Conference on Saturday. A 4F² cell is 2F by 2F at about two-thirds the area of current 6F² cells at the same feature size, and designs so far all stand the transistor up. The company has produced research and patent filings on the technology with papers in 2021, 2023, and 2025, and an 8Gb full-array research example was demonstrated at IEDM 2023.

Cao said CXMT’s version, the Vertical Surrounded Gate (VSG) transistor, has a channel that stands vertically with the gate wrapped around it, allowing stronger gate control with less leakage. Most importantly, standing the transistor up shrinks the cell. CXMT now has more than 300 published patent families tied to 4F², he added. The report says the industry as a whole is moving toward 4F² with 3D solutions that decouple DRAM and CMOS processes, combining them with wafer-level hybrid bonding, which allows logic and cell density to be optimized independently. Cao also covered CXMT’s own hybrid-bonding work, which began in 2019, with published patents.

Aside from this announcement, China’s primary DRAM maker has been in the news lately for its manufacturing and market-share gains.


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