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Infineon to set up high-volume 300 mm GaN power chip production in Austria

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Infineon to set up high-volume 300 mm GaN power chip production in Austria

Infineon will invest around €1.1 billion by 2034 to establish high-volume manufacturing of gallium nitride (GaN) power semiconductors on 300 mm wafers at its site in Villach, Austria.

The investment will go into Infineon's existing cleanroom facilities in Villach. Production is scheduled to start by the end of 2027, and the ramp-up will be aligned with market demand.

Infineon says it processed the world's first 300 mm GaN wafers in September 2024. A 300 mm wafer yields 2.3 times as many chips as a 200 mm wafer.

The European Commission has approved €319 million in state aid for the project under the European Chips Act. The aid is to be provided by Austria's Federal Ministry for Economic Affairs, Energy and Tourism, whose formal funding commitment is expected to follow.

As Infineon explains, GaN can switch and convert electricity much more efficiently, enabling smaller, more powerful and more energy-efficient electronic systems with lower energy loss and reduced heat generation. Applications include AI data centers, energy infrastructure, e-mobility, robotics and consumer electronics.

"By establishing high-volume manufacturing on 300-millimeter wafers, we will be the first company in the world to bring gallium nitride power electronics into volume production," said Jochen Hanebeck, CEO of Infineon Technologies.

"Chips are as important to tomorrow's economy as oil was to yesterday's," said Wolfgang Hattmannsdorfer, Austrian Federal Minister for Economic Affairs. "Europe currently accounts for only around 10 percent of global chip production.



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