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Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

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Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.”

“Fast, frequently rewritten memory requires low operating voltages, rapid switching, and high cycling endurance. In ferroelectric capacitors, however, accelerating polarization switching often requires higher voltages that can shorten device lifetime.

This work addresses this tradeoff through TiN electrode and interface engineering, reducing interfacial voltage loss and facilitating polarization reversal. Key experimental results include:

Beyond the capacitor measurements, the researchers propose a common-plate ferroelectric RAM (CP-FeRAM) architecture using one transistor and one capacitor per cell, and evaluate its readout through circuit simulations. The architecture explores polarization-based sensing after stored charge has decayed, offering a potential route to reducing refresh requirements in DRAM-like memory.”

Park, G.H., Jo, S., Park, S. et al. Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors. Nat Commun (2026). https://doi.org/10.1038/s41467-026-78705-4
Open Access.



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