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Broadband distributed amplifier for data centers, measurement systems and sensors

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Broadband distributed amplifier for data centers, measurement systems and sensors

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Modern data centers, high-precision measurement systems and high-resolution radar sensors rely on extremely broadband amplifier chips that combine low noise with high output power. Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a monolithic microwave integrated circuit (MMIC) with strong performance in these areas.

The distributed amplifier (DA) achieves a gain of 11 ± 2 dB at frequencies from 4 to 420 GHz. It is based on high-electron-mobility transistors (HEMTs) fabricated in the indium gallium arsenide (InGaAs) on silicon (InGaAs-on-Si) material system with a gate length of 20 nm. Previous generations of the chips were fabricated on gallium arsenide (GaAs) substrates with a gate length of 35 nm.

The MMIC was first presented in an article published last year in IEEE Microwave and Wireless Technology Letters.

"The MMIC amplifier we developed is characterized by a unique combination of the relevant parameters: bandwidth, noise and output power. Up to a frequency of 202 GHz, it achieves noise figures between 3.2 and 7.7 dB; in a setting optimized for low noise, these range from 2.8 to 6.7 dB. The saturated output power ranges between 6 and 8 dBm," explains Dr. Fabian Thome, developer of the MMIC and deputy head of the High-Frequency Electronics Business Unit at Fraunhofer IAF.

Such high-bandwidth amplifiers are particularly relevant for the latest generation of data centers that use optical data transmission.


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